feb.1999 mitsubishi transistor modules QM800HA-2HB high power switching use insulated type QM800HA-2HB outline drawing & circuit diagram dimensions in mm application ac motor controllers, ups, cvcf, dc motor controllers, nc equipment, welders 145 9 19 28 27 37 28 8 f 6.5 74 39 73 74 65 65 27 9 163 51 47 25 b e bx c e 16 3 16 3 34 3 34 3?4 2?8 45 50max. 47max. 44.5 42 8 b bx e e c label ? i c collector current ........................ 800a ? v cex collector-emitter voltage ......... 1000v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271
feb.1999 mitsubishi transistor modules QM800HA-2HB high power switching use insulated type absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m8 mounting screw m6 b(e) terminal screw m4 bx terminal screw m4 typical value ratings 1000 1000 1000 7 800 800 5300 40 8000 C40~+150 C40~+125 2500 8.83~10.8 90~110 1.96~2.94 20~30 0.98~1.47 12~18 0.98~1.47 12~18 2100 unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm nm kgcm g electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1000v, v eb =2v v cb =1000v, emitter open v eb =7v, collector open i c =800a, i b =1.06a i c =C800a (diode forward voltage) i c =800a, v ce =4.0v v cc =600v, i c =800a, i b1 =1.6a, Ci b2 =16.0a transistor part diode part conductive grease applied typ. max. 8.0 8.0 600 4.0 4.2 1.8 2.5 20 5.0 0.023 0.12 0.01
feb.1999 performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) collector current i c (a) base-emitter voltage v be (v) base current i b (a) mitsubishi transistor modules QM800HA-2HB high power switching use insulated type reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) collector-emitter reverse voltage Cv ceo (v) collector reverse current Ci c (a) 7 5 4 3 2 7 5 4 3 2 2.6 3.0 3.4 3.8 v ce =4v t j =25? 4.2 4.6 ? 10 0 10 1 10 ? 10 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 0 t j =25? t j =125? 0 10 ? 10 1 10 i c =600a i c =1000a i c =800a 23457 7 5 4 3 2 7 5 4 3 2 23457 t j =25? t j =125? 4 10 3 10 2 10 1 10 2 10 3 10 v ce =4.0v 7 5 4 3 2 7 5 4 3 2 23457 23457 t j =25? t j =125? ? 10 i b =1.06a v be(sat) v ce(sat) 1 10 0 10 1 10 2 10 3 10 7 5 4 3 2 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 t j =25? t j =125? 1 10 2 10 3 10 1000 800 600 400 200 0 01 23 4 5 t j =25? i b =250ma i b =1.06a i b =4a i b =0.5a
feb.1999 mitsubishi transistor modules QM800HA-2HB high power switching use insulated type reverse bias safe operating area collector-emitter voltage v ce (v) collector current i c (a) 1600 0 0 400 800 1200 400 800 1200 1600 t j =125? ? b2 =16a
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